MMBF5484LT1 - ON

MMBF5484LT1 JFET Transistor

www.DataSheet4U.com MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg −6.

Features

• Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg −65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc http://onsemi.com 2 SOURCE 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55.