MMBF5457LT1 - Motorola

MMBF5457LT1 JFET - General Purpose Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5457LT1/D JFET Ċ General Purpose Transistor N–Channel 2 SOURCE 3 GATE MMBF5457LT1 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Reverse Gate–Source Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 25 10 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 10.

Features

tage (VDS = 15 Vdc, ID = 100 µAdc) V(BR)GSS IGSS — — VGS(off) VGS 0.5 — — — —
  – 2.5 1.0 200
  – 6.0 — Vdc Vdc 25 — — Vdc nAdc ON CHARACTERISTICS Zero
  –Gate
  –Voltage Drain Current(2) (VDS = 15 Vdc, VGS = 0) 1. FR
  – 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. IDSS 1.0 — 5.0 mAdc   Thermal Clad is a trademark of the Bergquist Company Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBF5457LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL
  –SIGNAL CHA.