MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD914LT1/D High-Speed Switching Diode 3 CATHODE 1 ANODE MMBD914LT1 Motorola Preferred Device 3 1 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 2 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) TH.
(VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR
– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR — — CT VF trr — — — 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vdc ns 100 — Vdc
0.062 in. 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1
MMBD914LT1
820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω OUTPUT PUL.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBD914L |
ON Semiconductor |
100V High Speed Switching Diode | |
2 | MMBD914 |
JCET |
SWITCHING DIODE | |
3 | MMBD914 |
GOOD-ARK |
Switching Diode | |
4 | MMBD914 |
MCC |
Silicon Epitaxial Diode | |
5 | MMBD914 |
Diodes Incorporated |
SURFACE MOUNT SWITCHING DIODE | |
6 | MMBD914 |
General |
SMALL SIGNAL SWITCHING DIODE | |
7 | MMBD914 |
Infineon Technologies AG |
Silicon Switching Diode | |
8 | MMBD914 |
GME |
High-speed switching diode | |
9 | MMBD914 |
Vishay |
Small Signal Switching Diode | |
10 | MMBD914 |
Motorola |
HIGH-SPEED SWITCHING DIODE | |
11 | MMBD914 |
WEITRON |
Surface Mount Switching Diode | |
12 | MMBD914 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |