MMBD914L - ON Semiconductor

MMBD914L 100V High Speed Switching Diode

98ASB42226B Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United .

Features

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA Non−Repetitive Peak Forward Surge Current IFSM A t = 1 sec 1.0 t = 1 msec 2.0 Peak Forward Surge Current THERMAL CHARACTERISTICS IFM(surge) 500 mA Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Symbol Max Unit PD 225 mW 1.8 mW.