MMBD770T1G - ON Semiconductor

MMBD770T1G Schottky Barrier Diodes

MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface mount applications. Fe.

Features

 Extremely Low Minority Carrier Lifetime
 Very Low Capacitance
 Low Reverse Leakage
 Available in 8 mm Tape and Reel
 AEC Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MMBD330T1G, SMMBD330T1G MMBD770T1G, SMMBD770T1G VR Vdc 30 70 Forward Continuous Current (DC) Nonrepetitive Peak Forward Current (Note 1) IF IFSM 200 mA 1.0 A Forward Power Dissipation TA = 25C Juncti.