MMBD770T1 - Motorola

MMBD770T1 Schottky Barrier Diodes

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document BY MMBD110T1/D Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surfa.

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Motorola, Small
  –Signal Inc. 1996 1 MMBD110T1 MMBD330T1 MMBD770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) MMBD110T1 MMBD330T1 MMBD770T1 CT MMBD110T1 MMBD330T1 MMBD770T1 IR MMBD110T1 MMBD330T1 MMBD770T1 NF MMBD110T1 VF MMBD110T1 MMBD330T1 MMBD770T1 — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 — 6.0 — Vdc — — — 20 13 9.0 250 200 200 dB — — — 0.88 0.9 0.5 1.0 1.5 1.0 nAdc Symbol V(BR)R 7.0 30 70 10 — — — — — pF Min Typ Max Unit Volts Diode Capacitance (VR = 0, f = 1.0 MHZ, Note 1) (VR = 15 Volts, f = 1.0 MHZ) (.