MMBD6100LT1 - Motorola

MMBD6100LT1 Monolithic Dual Switching Diodes

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD6100LT1/D Monolithic Dual Switching Diode ANODE 1 2 ANODE MMBD6100LT1 3 CATHODE 3 1 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc 2 CASE 318 – 08, STYLE 9 SOT– 23 (TO – 236AB) .

Features

urrent (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) V(BR) IR VF 0.55 0.85 trr C — — 0.7 1.1 4.0 2.5 ns pF 70 — — 0.1 Vdc µAdc Vdc 1. FR
  – 5 = 1.0 0.75 2. Alumina = 0.4 0.3   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMBD6100LT1 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 9.