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MMBD6100LT1 |
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| Part Number | MMBD6100LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD6100LT1/D Monolithic Dual Switching Diode ANODE 1 2 ANODE MMBD6100LT1 3 CATHODE 3 1 MAXIMUM RATINGS (EACH DIODE) Rating Reverse ... |
| Features |
urrent (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) V(BR) IR VF 0.55 0.85 trr C — — 0.7 1.1 4.0 2.5 ns pF 70 — — 0.1 Vdc µAdc Vdc
1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMBD6100LT1 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 9... |
| Document |
 MMBD6100LT1 Data Sheet
PDF 78.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBD6100LT1 |
ON |
Monolithic Dual Switching Diode |
|
| 2 | MMBD6100LT1G |
ON Semiconductor |
Monolithic Dual Switching Diode |
|
| 3 | MMBD6100LT3 |
ON |
Monolithic Dual Switching Diode |
|
| 4 | MMBD6100 |
LGE |
Surface Mount Switching Diode |
|
| 5 | MMBD6100 |
SEMTECH |
Silicon Epitaxial Planar Switching Diode |
|