MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD2835LT1/D Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 ANODE 3 CATHODE 1 2 CATHODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc CASE 318 – 08, STYLE 12 SOT– 23 (TO – 236AB) THER.
ge Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR
– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2835LT1 MMBD2836LT1 MMBD2835LT1 MMBD2836LT1 CT VF V(BR) IR 35 75 — — — — — — — — — 100 100 4.0 1.0 1.0 1.2 4.0 pF Vdc Vdc nAdc
0.062 in. 0.024 in. 99.5% alumina.
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Motorola Small
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www.DataSheet4U.com MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Availabl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBD2835 |
JR |
Silicon Epitaxial Planar Switching Diode | |
2 | MMBD2835 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
3 | MMBD2835 |
GME |
Surface mount switching diode | |
4 | MMBD2835 |
LGE |
Surface Mount Switching Diode | |
5 | MMBD2835 |
SEMTECH |
Dual Switching Diodes | |
6 | MMBD2835 |
Galaxy Electrical |
Surface mount switching diode | |
7 | MMBD2836 |
Zowie Technology Corporation |
MONOLITHIC DUAL SWITCHING DIODE | |
8 | MMBD2836 |
JR |
Silicon Epitaxial Planar Switching Diode | |
9 | MMBD2836 |
GME |
Surface mount switching diode | |
10 | MMBD2836 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
11 | MMBD2836 |
Weitron Technology |
Surface Mount Switching Diode | |
12 | MMBD2836 |
LGE |
Surface Mount Switching Diode |