MMBD2835LT1 |
Part Number | MMBD2835LT1 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD2835LT1/D Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 ANODE 3 CATHODE 1 2 CATHODE 1 2 3 MAXIMUM RATINGS (EACH DIOD... |
Features |
ge Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2835LT1 MMBD2836LT1 MMBD2835LT1 MMBD2836LT1 CT VF V(BR) IR 35 75 — — — — — — — — — 100 100 4.0 1.0 1.0 1.2 4.0 pF Vdc Vdc nAdc 0.062 in. 0.024 in. 99.5% alumina. trr ns Thermal Clad is a trademark of the Bergquist Company REV 1 Motorola Small –Signal Transistors, FETs and Diodes Device... |
Document |
MMBD2835LT1 Data Sheet
PDF 84.80KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MMBD2835LT1 |
ON |
Monolithic Dual Switching Diodes | |
2 | MMBD2835 |
JR |
Silicon Epitaxial Planar Switching Diode | |
3 | MMBD2835 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
4 | MMBD2835 |
GME |
Surface mount switching diode | |
5 | MMBD2835 |
LGE |
Surface Mount Switching Diode |