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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
MJE51T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 2A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 10V ICEO Collector Cutoff Current VCE= 150V; IB=0 ICES Collector Cutoff Current VCE= 350V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.3A ; VCE= 10V hFE-2 DC Current Gain IC= 5A ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 10V; ftest=0.1MHz Switching times ton Turn-On .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE5170 |
INCHANGE |
PNP Transistor |
|
| 2 | MJE5171 |
INCHANGE |
PNP Transistor |
|
| 3 | MJE5172 |
INCHANGE |
PNP Transistor |
|
| 4 | MJE5180 |
INCHANGE |
NPN Transistor |
|
| 5 | MJE5181 |
INCHANGE |
NPN Transistor |
|
| 6 | MJE5182 |
INCHANGE |
NPN Transistor |
|
| 7 | MJE5190 |
ETC |
SILICON NPN POWER TRANSISTORS |
|
| 8 | MJE5191 |
ETC |
SILICON NPN POWER TRANSISTORS |
|
| 9 | MJE5192 |
ETC |
SILICON NPN POWER TRANSISTORS |
|
| 10 | MJE5193 |
ETC |
SILICON PNP POWER TRANSISTORS |
|
| 11 | MJE5194 |
ETC |
SILICON PNP POWER TRANSISTORS |
|
| 12 | MJE5195 |
ETC |
SILICON PNP POWER TRANSISTORS |
|