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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min)- MJE5170 = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 ·Low Saturation Voltage ·Complement to the NPN MJE5180/5181/5182 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJE5170/5171/5172 APPLICATIONS ·Designed for use in general purpose amplifier and switching .
METER MAX Rth j-c Thermal Resistance, Junction to Case 1.92 Rth j-a Thermal Resistance, Junction to Ambient 62.5 isc Website：www.iscsemi.com 1 ℃ UNIT ℃/W ℃/W isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJE5170/5171/5172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5170 MJE5171 IC= -30mA ;IB= 0 MJE5172 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -4V ICEO Collector Cutoff Current MJE5170 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE5170 |
INCHANGE |
PNP Transistor |
|
| 2 | MJE5171 |
INCHANGE |
PNP Transistor |
|
| 3 | MJE5180 |
INCHANGE |
NPN Transistor |
|
| 4 | MJE5181 |
INCHANGE |
NPN Transistor |
|
| 5 | MJE5182 |
INCHANGE |
NPN Transistor |
|
| 6 | MJE5190 |
ETC |
SILICON NPN POWER TRANSISTORS |
|
| 7 | MJE5191 |
ETC |
SILICON NPN POWER TRANSISTORS |
|
| 8 | MJE5192 |
ETC |
SILICON NPN POWER TRANSISTORS |
|
| 9 | MJE5193 |
ETC |
SILICON PNP POWER TRANSISTORS |
|
| 10 | MJE5194 |
ETC |
SILICON PNP POWER TRANSISTORS |
|
| 11 | MJE5195 |
ETC |
SILICON PNP POWER TRANSISTORS |
|
| 12 | MJE51T |
INCHANGE |
NPN Transistor |
|