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MJE371 - INCHANGE

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MJE371 PNP Transistor

·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 40(Min) @ IC= -1A ·Complement to Type MJE521 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching circuits. ·Recommended for use in 5~20 Watt audio amplifiers utilizing c.

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iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1 A; VCE= -1V MJE371 MIN MAX UNIT -40 V -100 μA -100 μA 40 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide f.

The same part from a different manufacturer

Datasheet MJE371 - SavantIC MJE371

·With TO-126 package ·Complement to type MJE521 APPLICATIONS ·For use in general-purpose amplifer and switching circuits.

Datasheet MJE371 - Motorola MJE371

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE371/D MJE371 Plastic Medium-Power PNP Silicon Transis.

Datasheet MJE371 - ON MJE371

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE371/D MJE371 Plastic Medium-Power PNP Silicon Transis.

Datasheet MJE371 - Central Semiconductor MJE371

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

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