MJE341 POWER TRANSISTORS Datasheet

MJE341 POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE341/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ .

Features

ector
  –Base Voltage Emitter
  –Base Voltage Collector Current — Continuous Base Current 500 250 mAdc mAdc Watts W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 20 0.16 TJ, Tstg
  – 65 to + 150 Plastic NPN Silicon Medium-Power Transistors MJE341 MJE344 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150
  – 200 VOLTS 20 WATTS _C CASE 77
  –08 TO
  –225AA TYPE THERMAL CHARACTERISTICS Characteristic Symbol θJC Max Unit Thermal Resistance, Junction to Case 6.25 _C/W 1.0 IC, COLLECTOR CURRENT (AMP) 500 µs 0.5 1.0 ms 0.2 0.1 0.05 SECOND BREAKDOWN.

The same part from a different manufacturer

MJE341 - INCHANGE

·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 150 V(Min) ·DC Current Gain- : hFE = 20(Min) @ IC= 150mA ·100% aval.

MJE341 - Motorola

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE341/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

Related Product

No.	Partie #	Fabricant	Description
1	MJE340	NTE	Silicon NPN Transistor
2	MJE340	Motorola	0.5 AMPERE POWER TRANSISTOR
3	MJE340	ST Microelectronics	COMPLEMETARY SILICON POWER TRANSISTORS
4	MJE340	Fairchild	NPN Epitaxial Silicon Transistor
5	MJE340	Multicomp	Medium Power NPN Transistors
6	MJE340	CDIL	NPN EPITAXIAL SILICON POWER TRANSISTOR
7	MJE340	ON Semiconductor	Plastic Medium-Power NPN Silicon Transistor
8	MJE340	Central Semiconductor	POWER TRANSITORS
9	MJE340	Inchange Semiconductor	Silicon NPN Power Transistor
10	MJE340G	ON Semiconductor	NPN Silicon Transistor
11	MJE340T	INCHANGE	NPN Transistor
12	MJE3439	Motorola	0.3 AMPERE POWER TRANSISTOR

MJE341 - ON