MJE340T - INCHANGE

MJE340T NPN Transistor

·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATI.

Features

wise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE DC Current Gain IC= 50m A ; VCE= 10V MJE340T MIN MAX UNIT 300 V 300 V 3 V 1.0 V 0.1 mA 0.1 mA 100 240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet.