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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base .
• High Current Gain − Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant
*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCB
VEB
IC IB
PD (Note 1)
60 70 5.0 10 6.0
75 0.6
Vdc Vdc Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality sho.
MJE2955T - RECTRON
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 .
MJE2955T - NTE
The MJE2955T (PNP) and MJE3055T (NPN) are silicon complementary power transistors in a TO−220 plastic package intended .
MJE2955T - BLUE ROCKET ELECTRONICS
TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package. / Features ，。 Large DC current(IC=10A),high fT(fT.
MJE2955T - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transisto.
MJE2955T - UTC
The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1 TO-220F1 1 TO-25.
MJE2955T - CDIL
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Power Di.
MJE2955T - Multicomp
MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-.
MJE2955T - TGS
It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter.
MJE2955T - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= -4A ·Complement to.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE2955 |
Fairchild |
PNP Silicon Transistor |
|
| 2 | MJE2955 |
GME |
Plastic-Encapsulate Transistors |
|
| 3 | MJE2955 |
Motorola |
(MJE2955 / MJE3055) POWER TRANSISTORS |
|
| 4 | MJE2955 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | MJE2955-G |
Comchip |
General Purpose Transistor |
|
| 6 | MJE2955A |
nELL |
Complementary Silicon power transistors |
|
| 7 | MJE2955T |
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 8 | MJE2955T |
Fairchild |
PNP Silicon Transistor |
|
| 9 | MJE2955T |
Central Semiconductor |
PNP Transistor |
|
| 10 | MJE2955T |
SavantIC |
Silicon PNP Power Transistors |
|
| 11 | MJE2955TG |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 12 | MJE2901T |
INCHANGE |
PNP Transistor |
|