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·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and output stages in complementary audio amplifier and general-purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET.
L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB= 0 VCB= 60V;IE= 0 VCB= 60V;IE= 0;TC= 100℃ VEB= 5V; IC=0 hFE DC Current Gain IC= 3A ; VCE= 3V MIN TYP. MAX UNIT 60 V 2.5 V 2.5 V 0.5 mA 0.2 2.0 mA 2.0 mA 750 NOTICE： ISC reserves the rights to make changes of the con.
MJE1100 - Motorola Semiconductor
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE1102 |
Freescale Semiconductor |
(MJE110x) TRANSISTOR |
|
| 2 | MJE110x |
Freescale Semiconductor |
(MJE110x) TRANSISTOR |
|
| 3 | MJE1123 |
Motorola |
Bipolar Power PNP Transistor |
|
| 4 | MJE105 |
Motorola |
5 Ampere Power Transistor |
|
| 5 | MJE105 |
ETC |
5 Ampere Power Transistor |
|
| 6 | MJE105K |
ETC |
5 Ampere Power Transistor |
|
| 7 | MJE12007 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | MJE122 |
ON |
Complementary Silicon Power Transistors |
|
| 9 | MJE127 |
ON |
Complementary Silicon Power Transistors |
|
| 10 | MJE13001 |
Unisonic Technologies |
NPN Epitaxial Silicon Transistor |
|
| 11 | MJE13001 |
MCC |
NPN Silicon Plastic-Encapsulate Transistor |
|
| 12 | MJE13001-P |
UTC |
NPN SILICON POWER TRANSISTOR |
|