MJE1100 INCHANGE NPN Transistor Datasheet, en stock, prix

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MJE1100

INCHANGE
MJE1100
MJE1100 MJE1100
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Part Number MJE1100
Manufacturer INCHANGE
Description ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI...
Features L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB= 0 VCB= 60V;IE= 0 VCB= 60V;IE= 0;TC= 100℃ VEB= 5V; IC=0 hFE DC Current Gain IC= 3A ; VCE= 3V MIN TYP. MAX UNIT 60 V 2.5 V 2.5 V 0.5 mA 0.2 2.0 mA 2.0 mA 750 NOTICE: ISC reserves the rights to make changes of the con...

Document Datasheet MJE1100 Data Sheet
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