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High Voltage Power Transistors DPAK for Surface Mount Applications MJD340 (NPN), MJD350 (PNP) Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically Similar to Popular MJE340 and MJE350 • Epoxy Meet.
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically Similar to Popular MJE340 and MJE350
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Total Power Dissipation
@ TC = 25°C Derate above 2.
MJD350 - Diodes
NEW PRODUCT MJD350 HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • High Colle.
MJD350 - TAITRON
MJD350 Marking Code MJD350 VCBO Collector-Base Voltage 300 VCEO Collector-Emitter Voltage 300 VEBO Emitter-Ba.
MJD350 - Fairchild
MJD350 MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Appl.
MJD350 - ST Microelectronics
The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar te.
MJD350 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD340/D High Voltage Power Transistors DPAK For Surface.
MJD350 - Kexin
SMD Type Transistors PNP Epitaxial Silicon Transistor MJD350 Features Load Formed for Surface Mount Application Strai.
MJD350 - BLUE ROCKET ELECTRONICS
TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features 。 High voltage. / Applications 。.
MJD350 - Inchange Semiconductor
·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(M.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD3055 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | MJD3055 |
Fairchild |
General Purpose Amplifier |
|
| 3 | MJD3055 |
ST Microelectronics |
Complementary Silicon Power Transistors |
|
| 4 | MJD3055 |
ON |
Complementary Power Transistors |
|
| 5 | MJD3055 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 6 | MJD3055 |
GME |
Epitaxial Planar NPN Transistor |
|
| 7 | MJD3055 |
TAITRON |
SMD Power Transistor |
|
| 8 | MJD3055T4 |
STMicroelectronics |
Low voltage NPN power transistor |
|
| 9 | MJD31 |
Kexin |
Complementary Power Transistors |
|
| 10 | MJD31 |
CDIL |
COMPLEMENTARY PLASTIC POWER TRANSISTORS |
|
| 11 | MJD31 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 12 | MJD31 |
Motorola |
SILICON POWER TRANSISTORS |
|