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MJD350 |
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| Part Number | MJD350 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·DPAK for Surface Mount Applications ·Complement to Type MJD340 ... |
| Features |
h j-a Thermal Resistance,Junction to Ambient 80 ℃/W
MJD350
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1.0mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -... |
| Document |
 MJD350 Data Sheet
PDF 205.83KB |
| Distributor | Stock | Price | Buy |
|---|
