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MJD210 - Inchange Semiconductor

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MJD210 Silicon PNP Power Transistor

·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD200 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25.

Features

Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJD210 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -25 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A ;IB= -0.2A -0.75 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A ;IB= -1A -1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A ;IB= -1A -2.5 V VBE(on) B.

The same part from a different manufacturer

Datasheet MJD210 - Fairchild MJD210

MJD210 MJD210 D-PAK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltag.

Datasheet MJD210 - ON MJD210

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Datasheet MJD210 - Motorola MJD210

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PN.

Datasheet MJD210 - UTC MJD210

The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 TO-251  FEATURE * C.

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