MJD122 Epitaxial Planar NPN Transistor Datasheet

MJD122 Epitaxial Planar NPN Transistor

Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value .

Features

 High DC Current Gain.
 Built-in a Damper Diode at E-C. Pb Lead-free
 Lead Formed for Surface Mount Applications.
 Straight Lead.
 Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range 100 100 5 8 16 120 1.5 -65 to +150 V V V.

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MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !.

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