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MJD122 |
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| Part Number | MJD122 |
| Manufacturer | TAITRON |
| Description | MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Di... |
| Features |
• Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 RthJC TJ, TSTG Thermal Resista... |
| Document |
 MJD122 Data Sheet
PDF 212.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD122 |
GME |
Epitaxial Planar NPN Transistor |
|
| 2 | MJD122 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 3 | MJD122 |
ST Microelectronics |
Complementary power Darlington transistors |
|
| 4 | MJD122 |
Fairchild |
NPN Silicon Darlington Transistor |
|
| 5 | MJD122 |
Motorola |
SILICON POWER TRANSISTORS |
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