MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straig.
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
*
http://onsemi.com
SILICON POWER TRANSISTORS
2 AMPERES 100 VOLTS, 20 WATTS
DPAK CASE 369C
DPAK−3 CASE 369D
MARKING DIAGRAMS
AYWW J11xG
YWW J11xG
DPAK
DPAK−3
A = Assembly Location Y = Year WW = Work Week x = 2.
·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight l.
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Tot.
SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITT.
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . .
MJD117 MJD117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Form.
Epitaxial Planar PNP Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Le.
TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features ,E C TIP117 。 High DC current gain,.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) .
Designed for general purpose power and switching such as output or driver stages in applications such as switching regul.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
2 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors | |
3 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | MJD112 |
Fairchild Semiconductor |
NPN Silicon Darlington Transistor | |
5 | MJD112 |
CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS | |
6 | MJD112 |
JCET |
NPN Transistor | |
7 | MJD112 |
GME |
Epitaxial Planar NPN Transistor | |
8 | MJD112 |
ON Semiconductor |
Complementary Darlington Power Transistor | |
9 | MJD112 |
MCC |
NPN Transistor | |
10 | MJD112 |
STMicroelectronics |
Complementary power Darlington transistor | |
11 | MJD112 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
12 | MJD112 |
Motorola |
SILICON POWER TRANSISTORS |