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MJD117 |
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| Part Number | MJD117 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-251-3L FEATURES z High DC Current Gain z Low Collector-Emitter Saturation Vo... |
| Features |
z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -100 -100
-5 -2 1.75 71 150 -55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown volta... |
| Document |
 MJD117 Data Sheet
PDF 166.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 2 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 3 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | MJD112 |
Fairchild Semiconductor |
NPN Silicon Darlington Transistor |
|
| 5 | MJD112 |
CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
|