(IPD) MIP2F20MS MOS , , ( ) ( ) AC Ta = 25°C±3°C VCC VDD VD VCC VDD VFB IFB - 0.3 ∼ +700 - 0.3 ∼ +45 - 0.3 ∼ +8 - 0.3 ∼ +8 500 V V V V mA CL VCL - 0.3 ∼ +8 V CL ICL 150 mA * IDP 650 mA Tch 150 °C Tstg -55 ∼ +150 °C ) *: 。 + ton(BLK) + td(OCL) DIP7-A1 : MIP2F2 1. VDD 5. DRAIN .
IFB = 20 mA, ICL = 50 mA
VD = 40 V, FB: Open, CL: Open
ON → OFF VCC = 15 V, VD = 5 V, ICL = 50 mA
VCC = 15 V, VD = 5 V, ICL = 50 mA
ICC0 → ICC VCC = 15 V, VD = 5 V, ICL = 50 mA
VCC = 15 V, VD = 5 V, IFB = 20 mA, ICL = 50 mA
VCC = 15 V, VD = 5 V, IFB = 20 mA, ICL = 50 mA
90 100 110 kHz
9 12 15 kHz
45 47.5 50 %
5.4 5.9 6.4 V 4.6 5.1 5.6 V 6.5 7.5 8.5 V 11 12 13 V 25 45 65 mA
2 mA 7 11 15 mA
0.7 1.0 1.3 V
0.25 0.35 0.45 mA
2 SLB00082AJD
MIP2F20MS
() TC = 25°C±3°C
()
ICC(OFF)
VCC = 15 V, VD = 5 V, IFB = IFB1 + 5 mA, ICL = 50 mA
ICC0
VCC = 15 V, VD = 5 V, IFB: Open, ICL = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MIP2F20MTSCF |
Panasonic |
Silicon MOSFET type Integrated Circuit | |
2 | MIP2F2 |
Panasonic |
Intelligent Power Device (IPD) | |
3 | MIP2F10MS |
Panasonic |
High-Performance IPD | |
4 | MIP2F10MS |
Panasonic |
Intelligent Power Device (IPD) | |
5 | MIP2F30MS |
Panasonic |
Intelligent Power Device (IPD) | |
6 | MIP2F30MTSCF |
Panasonic |
Silicon MOSFET | |
7 | MIP2F40MS |
Panasonic |
Intelligent Power Device (IPD) | |
8 | MIP2F40MTSCF |
Panasonic |
Silicon MOSFET | |
9 | MIP2F50MS |
Panasonic |
Intelligent Power Device (IPD) | |
10 | MIP251-10 |
euroclamp |
MIP25x-10 /16-IQ | |
11 | MIP252-10 |
euroclamp |
MIP25x-10 /16-IQ | |
12 | MIP281 |
Panasonic |
Silicon MOSFET |