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MIG300Q2CMB1X
MITSUBISHI SEMICONDUCTOR
6. GND (L) GND (H) 3. 7. IN (L) IN (H) 4. 8. VD (L) VD (H) 2004-10-01 3/9 MIG300Q2CMB1X Maximum Ratings (Tj = 25°C) Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature Module Isolation voltage Screw torque (terminal) Screw torque (mounting) AC 1 min M6 M5 Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ⎯ VD-GND terminal IN-GND terminal FO-GND terminal FO sink current Characteristics .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MIG300Q101H |
Toshiba Semiconductor |
Intelligent Power Module Silicon N Channel IGBT |
|
| 2 | MIG300J101H |
Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
|
| 3 | MIG300J2CSB1W |
Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications |
|
| 4 | MIG30J103H |
Toshiba Semiconductor |
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT |
|
| 5 | MIG30J106L |
Toshiba |
Motor Control Applications |
|
| 6 | MIG30J901H |
Toshiba Semiconductor |
INTEGRATED GTR MODULE |
|
| 7 | MIG30J951H |
Toshiba Semiconductor |
INTEGRATED GTR MODULE |
|
| 8 | MIG100J101H |
Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
|
| 9 | MIG100J201H |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
| 10 | MIG100J201HC |
Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications |
|
| 11 | MIG100J7CSB1W |
Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
|
| 12 | MIG100Q201H |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|