MIG100J101H - Toshiba Semiconductor

MIG100J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG100J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J101H High Power Switching Applications Motor Control Applications l Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sa.

Features

perature range Isolation voltage Screw torque Condition P-N power terminal ― Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ― VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current ― ― AC 1 minute, M5 Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO TC Tstg VISO ― Ratings 450 600 100 100 300 150 20 20 20 14 −20 ~ +100 −40 ~ +125 2500 3 Unit V V A A W °C V V V mA °C °C V N
·m Electrical Characteristics (Tj = 25°C) a. Inverter Stage Characteristic Collector cut-off current Symbol ICEX Test Condition VCE = 600 V Tj = 25°C Tj = 125°C Min ― ― ― ― ― ― 0V (Note 1) ― ― ― Typ. ― ― 2.0 2.0 2.1 1.0 1.7 0.2.