Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Powerex Six IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syst.
£ Integrated Thermistor £ Low VCE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG200J6ES61 is a 600V (VCES), 200 Ampere Six IGBTMOD™ Compact IGBT Series Module. Type MG Current Rating Amperes 200 VCES Volts (x 10) 60 CN-2 SIGNAL TERMINAL 1 G(Z) 2 G(Y) 3 G(X) 4 E(L) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.80±0.04 1.97±0.01 1.61±0.03 4.33±0.01 2.44±0.0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG200J2YS50 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 2 | MG200 |
HITANO |
Metal Glaze Resistors |
|
| 3 | MG200F6ES61 |
Powerex Power Semiconductors |
Compact IGBT Series Module |
|
| 4 | MG200H1AL1 |
Toshiba |
DARLINGTON POWER MODULE |
|
| 5 | MG200H1AL2 |
Toshiba Semiconductor |
IGBT |
|
| 6 | MG200H1FL1A |
Toshiba Semiconductor |
IGBT |
|
| 7 | MG200M1UK1 |
ETC |
NPN |
|
| 8 | MG200M1UK1 |
Toshiba |
GTR Module |
|
| 9 | MG200M1UK1 |
ETC |
TRANSISTOR MODULES |
|
| 10 | MG200Q1JS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 11 | MG200Q1UK1 |
ETC |
NPN |
|
| 12 | MG200Q1UK1 |
ETC |
TRANSISTOR MODULES |
|