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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE)
HH
HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
FEATURES
. The Collector is Isolated from Case. . With Built-in Free Wheeling Diode
. High DC Current Gain : hFE=80(Min.) (I C=200A)
. Low Saturation Voltage: VCE ( sat )=2V(Max. ) (Ic=200A)
. High Speed
: tf =4/
. The Collector is Isolated from Case. . With Built-in Free Wheeling Diode
. High DC Current Gain : hFE=80(Min.) (I C=200A)
. Low Saturation Voltage: VCE ( sat )=2V(Max. ) (Ic=200A)
. High Speed
: tf =4/Features
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG200H1AL2 |
Toshiba Semiconductor |
IGBT |
|
| 2 | MG200H1FL1A |
Toshiba Semiconductor |
IGBT |
|
| 3 | MG200 |
HITANO |
Metal Glaze Resistors |
|
| 4 | MG200F6ES61 |
Powerex Power Semiconductors |
Compact IGBT Series Module |
|
| 5 | MG200J2YS50 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 6 | MG200J6ES61 |
Powerex Power Semiconductors |
Compact IGBT Series Module |
|
| 7 | MG200M1UK1 |
ETC |
NPN |
|
| 8 | MG200M1UK1 |
Toshiba |
GTR Module |
|
| 9 | MG200M1UK1 |
ETC |
TRANSISTOR MODULES |
|
| 10 | MG200Q1JS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 11 | MG200Q1UK1 |
ETC |
NPN |
|
| 12 | MG200Q1UK1 |
ETC |
TRANSISTOR MODULES |
|