MEM511C - Siliconix

MEM511C p-channel MOSFET

enhancement-type H p-channel MOSFET designed for • • • Performance Curves MB See Section 4 • Audio Amplifiers • Choppers • Commutators ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Source Voltage ....... -25 V Gate-to-Source Voltage ....... -25 V Gate-to-Drain Voltage ......... -25 V Drain Current ..............

Features

te Threshold Voltage IO(off) Drain Cutoff Current 10(on) Drain Current rOS(on) Drain-Source ON Resistance Common-Source Forward 9h Transconductance Cgs Gate~Source Capacitance Cgd Gate-Drain Capacitance Cds Drain-Source Capacitance Min TV. -25 -3 -3 150 1,000 1,000 0.15 Mox Unit -1 nA V -6 -10 nA mA Sl ,umho 4 4 pF Test Conditions VGS~ -15V, VOS- Vas- 0 10 - -10~A. VGS - Vas- 0 VGS - VOS. ID - -10.uA, Vas - 0 VOS eo -20 V, VGS '" Vas'" a VGS VDS -lOV,Vas- O VGS -15 V.IO -1 rnA. Vas- a VGS~VDS~-10V,VBS~0 I f == 1 kHz f== 10 MHz VGS == VDS == ~10 V. VBS == 0 f .