enhancement-type H p-channel MOSFET designed for • • • Perfonnance Curves MKA See Section 4 • Audio Amplifiers • Choppers • Commutators ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Source Voltage ....... -30 V Gate-to-Source Voltage ....... -30V Gate-to-Drain Voltage ......... -30V Drain Current ...............
oltage Gate Threshold Voltage Drain Cutoff Current Drain Current Drain-Source ON Resistance Common Source Forward Transconductance Gate-Source Capacitance Gate-Drain Capacitance Drain-Source Capacitance Min TVp -30 -3 -0.5 -3 -6 1,000 1,000 0.15 Unit Mox -1 nA V -6 -10 nA mA 300 n Test Conditions VGS"" -15 V. Vos '" Vas'" 0 10 = -10,uA, VGS '" Vas = 0 VGS=VOS, ID= -10J.lA, Vas= 0 Vos = -20 V. VGS = Vas = a VGS = Vos == -10 V, Vas = 0 VGS=-15V,lo=-O.lmA,Vss=O .umho 3 2.5 pF VGS '" VOS '" -10 V, Vas = 0 f - 1 kHz f = 10 MHz f = 1 MHz MKA Ell © 1977 Siliconix incorporated .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MEM511C |
Siliconix |
p-channel MOSFET | |
2 | MEM1005PP |
TDK |
EMC Components | |
3 | MEM2012T101RT0S1 |
TDK |
SMD | |
4 | MEM2012T201RT0S1 |
TDK |
SMD | |
5 | MEM2012T25R0T0S1 |
TDK |
SMD | |
6 | MEM2012T35R0T0S1 |
TDK |
SMD | |
7 | MEM2012T50R0T0S1 |
TDK |
SMD | |
8 | MEM2309 |
MicrOne |
P-Channel MOSFET | |
9 | MEM4X16E43VTW-5 |
ETC |
4 MEG x 16 EDO DRAM | |
10 | ME01 |
MITSUMI |
1cell Li-ion/Li-polymer battery protection | |
11 | ME030-350 |
DECA |
Closed ends Header | |
12 | ME030-508 |
Lumberg |
Pluggable terminal blocks |