The ME4425 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.
● RDS(ON)≦14mΩ@VGS=-10V
● RDS(ON)≦19mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
e Ordering Information: ME4425 (Pb-free)
ME4425-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25℃ TA=70℃
Pulsed Drain Current
Avalanche Current
Aval.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME4425-G |
Matsuki Electric |
P-Channel 30-V (D-S) MOSFET | |
2 | ME4410 |
Matsuki |
N-Channel 30-V (D-S) MOSFET | |
3 | ME4410A |
Matsuki |
N-Channel 30-V (D-S) MOSFET | |
4 | ME4410B |
Matsuki |
N-Channel 30-V (D-S) MOSFET | |
5 | ME4410B-G |
Matsuki |
N-Channel 30-V (D-S) MOSFET | |
6 | ME4411 |
Matsuki |
P-Channel MOSFET | |
7 | ME4411-G |
Matsuki |
P-Channel MOSFET | |
8 | ME4412 |
Matsuki |
N-Channel 30-V (D-S) MOSFET | |
9 | ME4412-G |
Matsuki |
N-Channel 30-V (D-S) MOSFET | |
10 | ME4435 |
Matsuki |
P-Channel 30-V (D-S) MOSFET | |
11 | ME4435-G |
Matsuki |
P-Channel 30-V (D-S) MOSFET | |
12 | ME4436 |
Matsuki |
N-Channel 60V (D-S) MOSFET |