ME4410A - Matsuki

ME4410A N-Channel 30-V (D-S) MOSFET

The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.

Features

● RDS(ON)≦18mΩ@VGS=10V
● RDS(ON)≦20mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Thermal .