MDP2N60 - MagnaChip

MDP2N60 N-Channel MOSFET

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 2.0A RDS(ON) ≤ 4.5Ω @ VGS = 10V @ VGS = 10V Applications Power .

Features

VDS = 600V ID = 2.0A RDS(ON) ≤ 4.5Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o MDP2N60 600 ±30 2.0 1.2 8.0 53.9 0.43 5.39 4.5 115 MDF2N60 Unit V V ID IDM 2.0
* 1.2
* 8.0
* 22.7 0.18 A A 24 W W/ oC mJ V/ns mJ o TC=25oC Derate above 25 oC P.