MDP16N50G - MagnaChip

MDP16N50G N-Channel MOSFET

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V VDS = 550V @ Tjmax ID = 16A @VGS = 10V RDS(ON) ≤ 0.35Ω @VGS = 1.

Features

VDS = 500V VDS = 550V @ Tjmax ID = 16A @VGS = 10V RDS(ON) ≤ 0.35Ω @VGS = 10V Applications Power Supply HID Lighting D TO-220 MDP Series TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
* Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC G S Symb.