MDF12N50 - MagnaChip

MDF12N50 N-Channel MOSFET 500V

The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF12N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, Hi.

Features

VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy (4) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o Rating 500 ±30 11.5 7.0 46 42 0.32 4.5 460 -55~150 Unit V V A A A W W/ oC V/ns mJ o ID IDM TC=25oC Derate above 25 oC PD Dv/dt EAS TJ, Tstg Junction and Storage Temperature Range ※.