MDES10N025RH - MagnaChip

MDES10N025RH N-channel MOSFET

Features The MDES10N025RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-Vehicles(E-bike), DC/DC converter, and general purpose applications.  VDS = 100V  ID .

Features

The MDES10N025RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-Vehicles(E-bike), DC/DC converter, and general purpose applications.  VDS = 100V  ID = 180A @VGS = 10V  Very low on-resistance RDS(ON) < 2.5 mΩ @VGS = 10V  100% Avalanche Tested  100% Rg Tested  100% △VDS Tested D Tab Pin 4, Tab 1 7 TO-263-7L Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-.