MDES08N019RH - MagnaChip

MDES08N019RH Single N-channel Trench MOSFET

Features The MDES08N019RH uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. MDES08N019RH is suitable device for Motor Drive applications and general purpose applications.  VDS = 80V  ID = 180A @VGS = 10V  Very low on-resistance RDS(ON) < 1.9 mΩ @VGS.

Features

The MDES08N019RH uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. MDES08N019RH is suitable device for Motor Drive applications and general purpose applications.  VDS = 80V  ID = 180A @VGS = 10V  Very low on-resistance RDS(ON) < 1.9 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested  175 oC operating temperature TO-263-7L Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Sil.