The MDDN25 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications. Features VDS = 250V ID = 6.2A RDS(ON) ≤ 0.55Ω Applications Power Supply PFC LED TV @VGS = 10V D Absolute Maximum Ratings (T.
VDS = 250V
ID = 6.2A
RDS(ON) ≤ 0.55Ω
Applications
Power Supply
PFC
LED TV
@VGS = 10V
D
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Nov..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDD7N20C |
MagnaChip |
N-Channel MOSFET | |
2 | MDD710-22N2 |
IXYS |
Dual Diode Modules | |
3 | MDD710-24N2 |
IXYS |
Dual Diode Modules | |
4 | MDD710-26N2 |
IXYS |
Dual Diode Modules | |
5 | MDD72-08N1B |
IXYS |
Standard Rectifier | |
6 | MDD72-12N1B |
IXYS |
Standard Rectifier | |
7 | MDD72-14N1B |
IXYS |
Standard Rectifier | |
8 | MDD72-16N1B |
IXYS |
Standard Rectifier | |
9 | MDD72-18N1B |
IXYS |
Standard Rectifier | |
10 | MDD06N100 |
MagnaChip |
N-Channel MOSFET | |
11 | MDD08N067RH |
MagnaChip |
N-channel MOSFET | |
12 | MDD1051 |
MagnaChip |
Single N-channel MOSFET |