MC33GD3100 - NXP

MC33GD3100 Advanced IGBT/SiC gate driver

The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults. Accurate and con.

Features

This section summarizes the key features, safety features, and regulatory approvals. 3.1 Key features
• SPI interface for safety monitoring, programmability and flexibility
• Low propagation delay and minimal PWM distortion
• Integrated Galvanic signal isolation (up to 8 kV)
• Integrated gate drive power stage capable of 15 A peak source and sink
• Fully programmable Active Miller Clamp
• Compatible with negative gate supply
• Compatible with current sense and temperature sense IGBTs
• Integrated soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping
• CMTI > 100.