MBRS2040LT3G - ON Semiconductor

MBRS2040LT3G Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free w.

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Low Forward Voltage Drop
• ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V)
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca.