MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS2040LT3/D Advance Information Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low .
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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• Compact Package with J
–Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over
–Voltage Protection Low Forward Voltage Drop
MBRS2040LT3
SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 95 mg (approximately)
• Maximum Temperature of 260°C / 10 Seconds for Solde.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRS2040LT3G |
ON Semiconductor |
Schottky Power Rectifier | |
2 | MBRS2045CT |
JGD |
Dual Common Cathode Schottky Rectifiers | |
3 | MBRS2045CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
4 | MBRS2045CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
5 | MBRS20100CT |
JGD |
Dual Common Cathode Schottky Rectifiers | |
6 | MBRS20100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
7 | MBRS20100CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
8 | MBRS20150CT |
JGD |
Dual Common Cathode Schottky Rectifiers | |
9 | MBRS20150CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
10 | MBRS20150CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
11 | MBRS20200CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
12 | MBRS2035CT |
JGD |
Dual Common Cathode Schottky Rectifiers |