Surface Mount Schottky Power Rectifier MBRS140T3G, SBRS8140N, SBRS8140T3G Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectifica.
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
(0.55 V Max @ 1.0 A, TJ = 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRS140T3 |
Motorola |
Surface Mount Schottky Power Rectifier | |
2 | MBRS140TRPBF |
International Rectifier |
SCHOTTKY RECTIFIER | |
3 | MBRS140 |
Fairchild Semiconductor |
SCHOTTKY POWER RECTIFIER | |
4 | MBRS140 |
SunMate |
SURFACE MOUNT SCHOTTKY BARRIER DIODES | |
5 | MBRS140G |
American First Semiconductor |
(MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers | |
6 | MBRS140LT3 |
Motorola |
Surface Mount Schottky Power Rectifier | |
7 | MBRS140LT3 |
ON Semiconductor |
Surface Mount Schottky Power Rectifier | |
8 | MBRS10100 |
Taiwan Semiconductor |
Surface Mount Schottky Barrier Rectifiers | |
9 | MBRS10100CT |
JGD |
Dual Common Cathode Schottky Rectifiers | |
10 | MBRS10100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifiers | |
11 | MBRS10100CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
12 | MBRS10150 |
Taiwan Semiconductor |
Surface Mount Schottky Barrier Rectifiers |