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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS140T3/D Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequen.
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
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• Small Compact Surface Mountable Package with J
–Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection
MBRS140.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MBRS140T3G |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 2 | MBRS140TRPBF |
International Rectifier |
SCHOTTKY RECTIFIER |
|
| 3 | MBRS140 |
Fairchild Semiconductor |
SCHOTTKY POWER RECTIFIER |
|
| 4 | MBRS140 |
SunMate |
SURFACE MOUNT SCHOTTKY BARRIER DIODES |
|
| 5 | MBRS140G |
American First Semiconductor |
(MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers |
|
| 6 | MBRS140LT3 |
Motorola |
Surface Mount Schottky Power Rectifier |
|
| 7 | MBRS140LT3 |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 8 | MBRS10100 |
Taiwan Semiconductor |
Surface Mount Schottky Barrier Rectifiers |
|
| 9 | MBRS10100CT |
JGD |
Dual Common Cathode Schottky Rectifiers |
|
| 10 | MBRS10100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifiers |
|
| 11 | MBRS10100CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 12 | MBRS10150 |
Taiwan Semiconductor |
Surface Mount Schottky Barrier Rectifiers |
|