MBRH12030R - GeneSiC

MBRH12030R Silicon Power Schottky Diode

MBRH12020 thru MBRH12040R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current.

Features

• High Surge Capability
• Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.3 ms Conditions MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R) 20 14 20 120 2000 -40 to 175 -40 to 175 30 21 30 120 2000 -40 to 17.