MBRH12020 thru MBRH12040R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current.
• High Surge Capability
• Types up to 100 V VRRM D-67 Package
VRRM = 20 V - 100 V IF = 120 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.3 ms Conditions MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R) 20 14 20 120 2000 -40 to 175 -40 to 175 30 21 30 120 2000 -40 to 17.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRH12020R |
GeneSiC |
Silicon Power Schottky Diode | |
2 | MBRH120100 |
America Semiconductor |
Silicon Power Schottky Diode | |
3 | MBRH120100R |
America Semiconductor |
Silicon Power Schottky Diode | |
4 | MBRH12030 |
GeneSiC |
Silicon Power Schottky Diode | |
5 | MBRH12030R |
GeneSiC |
Silicon Power Schottky Diode | |
6 | MBRH12035 |
GeneSiC |
Silicon Power Schottky Diode | |
7 | MBRH12035R |
GeneSiC |
Silicon Power Schottky Diode | |
8 | MBRH12040 |
GeneSiC |
Silicon Power Schottky Diode | |
9 | MBRH12040R |
GeneSiC |
Silicon Power Schottky Diode | |
10 | MBRH12045 |
America Semiconductor |
Silicon Power Schottky Diode | |
11 | MBRH12045R |
America Semiconductor |
Silicon Power Schottky Diode | |
12 | MBRH12060 |
America Semiconductor |
Silicon Power Schottky Diode |