Switch-mode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG Features and Benefits Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications Power Supply − Output Rectification Power Management Inst.
Low Forward Voltage: 0.67 V @ 125C
Low Power Loss/High Efficiency
High Surge Capacity
175C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
These are Pb−Free Devices
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
ESD Rating: Human Body Model = 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRF30H100CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
2 | MBRF30H100CT |
Vishay |
Dual Common-Cathode High-Voltage Schottky Rectifier | |
3 | MBRF30H100CT |
ON Semiconductor |
Switch-mode Power Rectifier | |
4 | MBRF30H150CT |
Vishay |
Dual Common Cathode High Voltage Schottky Rectifier | |
5 | MBRF30H150CTG |
ON Semiconductor |
Power Rectifier | |
6 | MBRF30H35CT |
Vishay Siliconix |
Dual Common Cathode Schottky Rectifier | |
7 | MBRF30H45CT |
Vishay |
Dual Common Cathode Schottky Rectifier | |
8 | MBRF30H50CT |
Vishay |
Dual Common Cathode Schottky Rectifier | |
9 | MBRF30H60CT |
Vishay Siliconix |
Dual Common Cathode Schottky Rectifier | |
10 | MBRF30H60CTG |
ON Semiconductor |
SWITCHMODE Power Rectifier | |
11 | MBRF30H90CT |
Vishay |
Dual Common-Cathode High-Voltage Schottky Rectifier | |
12 | MBRF300100 |
America Semiconductor |
Silicon Power Schottky Diode |