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MBRF30H100CT - Inchange Semiconductor

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MBRF30H100CT Schottky Barrier Rectifier

Schottky Barrier Rectifier INCHANGE Semiconductor MBRF30H100CT FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high freque.

Features


·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current 100 V 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single.

The same part from a different manufacturer

Datasheet MBRF30H100CT - Vishay MBRF30H100CT

MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage .

Datasheet MBRF30H100CT - ON Semiconductor MBRF30H100CT

Switch‐mode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG Features and Benefits • Low Forward Voltage: 0.67 V .

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