MBR4015LWTG - ON Semiconductor

MBR4015LWTG Surface Mount Schottky Power Rectifier

MBR4015LWTG Switch Mode Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity .

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features
• Highly Stable Oxide Passivated Junction
• Guardring for Overvoltage Protection
• Low Forward Voltage Drop
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating.
• Full Electrical Isolation without Additional Hardware
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
* Mechanical Characteristics
• Case: Molded Epoxy
• E.